Deep-level transient spectroscopy of the charged defects in p-i-n perovskite solar cells induced by light-soaking

The long-term stability of halide perovskite solar cells (PSCs) remains the critical problem this photovoltaic technology. Different structural defects formed in thin-film films were considered as a main trigger for decomposition absorber and corrosion interfaces device structure. changes performance PSCs require detailed analysis generated under external stress (light heat). Using admittance, deep-level transient spectroscopy (DLTS) reverse DLTS we determined evolution defect energy levels p-i-n PCS continuous light soaking stress. We compared impact charged on CsFAPbI3 based devices with without Cl-doping. Despite gain output PCSs, CsFAPbI3-xClx showed improved stability. T80 (time required to reduce initial efficiency by 20%) Cl-doped was 1280 h, while pure only 650 h. Three different configurations. found that Cl-doping suppressed formation antisite (IPb, IFA) iodine interstitials (Ii). defect's after analyzed discussed. present work provides new insights behavior stress, revealing physical-chemical Cl-additive strategy.